Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processingAIDA, Hideo; AOTA, Natsuko; TAKEDA, Hidetoshi et al.Journal of crystal growth. 2012, Vol 361, pp 135-141, issn 0022-0248, 7 p.Article

Delayed onset of return flow by substrate inclination in model horizontal longitudinal MOCVD processesKUO, W. S; WANG, C. Y; TUH, J. L et al.Journal of crystal growth. 2005, Vol 274, Num 1-2, pp 265-280, issn 0022-0248, 16 p.Article

Visualization of return flow structure in mixed convection of gas over a heated circular plate in a horizontal flat ductTUH, J. L; LIN, T. F.Journal of crystal growth. 2003, Vol 257, Num 1-2, pp 199-211, issn 0022-0248, 13 p.Article

A new photocatalyzer InN_xO_y film grown by ArF excimer laser-induced MOCVD at low temperature (RT∼200 °C)YAMAMOTO, A; MIYANISHI, M; KUNISHIGE, T et al.Journal of crystal growth. 2007, Vol 298, pp 390-393, issn 0022-0248, 4 p.Conference Paper

Vapour pressure and heat capacities of metal organic precursors, Y(thd)₃ and Zr(thd)₄FULEM, Michal; RUZICKA, Kvetoslav; RUZICKA, Vlastimil et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 192-200, issn 0022-0248, 9 p.Article

Factors influencing the purity of electronic grade phosphine delivered to MOCVD toolsJUN FENG; OWENS, Mitch; RAYNOR, Mark W et al.Journal of crystal growth. 2010, Vol 312, Num 8, pp 1334-1339, issn 0022-0248, 6 p.Conference Paper

New DFB grating structure using dopant-induced refractive index stepGLEW, R. W; HINZER, K; WHITE, J. K et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 349-354, issn 0022-0248, 6 p.Conference Paper

Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substratePENG XIANG; YIBIN YANG; JIALI LIN et al.Journal of crystal growth. 2014, Vol 387, pp 106-110, issn 0022-0248, 5 p.Article

MOCVD-grown compressively strained C-doped In_xGa_1-xAs_1-ySb_y with high-In/Sb content for very low turn-on-voltage InP-based DHBTsHOSHI, Takuya; KASHIO, Norihide; SUGIYAMA, Hiroki et al.Journal of crystal growth. 2014, Vol 404, pp 172-176, issn 0022-0248, 5 p.Article

Metalorganic chemical vapor deposition of Al₂O₃ using trimethylaluminum and O₂ precursors: Growth mechanism and crystallinityLIU, X; CHAN, S. H; WU, F et al.Journal of crystal growth. 2014, Vol 408, pp 78-84, issn 0022-0248, 7 p.Article

Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVDSOZYKIN, A. S; STRELCHENKO, S. S; PROKOLKIN, E. V et al.Journal of crystal growth. 2013, Vol 363, pp 253-257, issn 0022-0248, 5 p.Article

Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shapeSOLTYS, J; KUDELA, R; KUCERA, M et al.Journal of crystal growth. 2011, Vol 316, Num 1, pp 67-70, issn 0022-0248, 4 p.Article

Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVDSHIN, J. C; D'SOUZA, M; KIRCH, J et al.Journal of crystal growth. 2010, Vol 312, Num 8, pp 1379-1382, issn 0022-0248, 4 p.Conference Paper

Structural and optical properties of SnO₂ films grown on α-Al₂O₃(000 1) by MOCVDXIANJIN FENG; JIN MA; FAN YANG et al.Journal of crystal growth. 2008, Vol 310, Num 2, pp 295-298, issn 0022-0248, 4 p.Article

Isoelectronic nitrogen 5-doping in GaP and single-photon emission from individual nitrogen pairsSAKUMA, Yoshiki; IKEZAWA, Michio; WATANABE, Masato et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4790-4794, issn 0022-0248, 5 p.Conference Paper

Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxyRODAK, L. E; KASARLA, K. R; KORAKAKIS, D et al.Journal of crystal growth. 2007, Vol 306, Num 1, pp 75-79, issn 0022-0248, 5 p.Article

Inversion domains in AlGaN films grown on patterned sapphire substrateKAWAMICHI, Shuichi; NISHINO, Katsushi; SUMIYOSHI, Kazuhide et al.Journal of crystal growth. 2007, Vol 298, pp 297-299, issn 0022-0248, 3 p.Conference Paper

Crystal morphology evolution in film growth : A general approachDANXU DU; SROLOVITZ, David J.Journal of crystal growth. 2006, Vol 296, Num 1, pp 86-96, issn 0022-0248, 11 p.Article

Performance of single use purifiers vs. regenerable purifiers for growth of high brightness gallium nitride LEDsTORRES, Robert; WATANABE, Tadaharu; VININSKI, Joseph et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 231-235, issn 0022-0248, 5 p.Conference Paper

Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al₂O₃ by metal-organic chemical vapor depositionXIAOTIAN YANG; GUOTONG DU; XINQIANG WANG et al.Journal of crystal growth. 2003, Vol 252, Num 1-3, pp 275-278, issn 0022-0248, 4 p.Article

Improved GaN-on-Si epitaxial quality by incorporating various Si_xN_y interlayer structuresWANG, Tzu-Yu; OU, Sin-Liang; HORNG, Ray-Hua et al.Journal of crystal growth. 2014, Vol 399, pp 27-32, issn 0022-0248, 6 p.Article

High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor depositionCHUNG, T; KEOGH, D. M; RYOU, J.-H et al.Journal of crystal growth. 2007, Vol 298, pp 852-856, issn 0022-0248, 5 p.Conference Paper

Structure and photoluminescence studies of Pr-implanted GaNSONG, S. F; CHEN, W. D; SU, Fuhai et al.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 400-404, issn 0022-0248, 5 p.Article

An accurate continuous level indication for precursor bubblersKANJOLIA, R. K; ODEDRA, R; KINGSLEY, A. J et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 236-240, issn 0022-0248, 5 p.Conference Paper

Analysis of a time-dependent supply mechanism in selective area growth by MOCVDGREENSPAN, J. E; BLAAUW, C; EMMERSTORFER, B et al.Journal of crystal growth. 2003, Vol 248, pp 405-410, issn 0022-0248, 6 p.Conference Paper